B1017 데이터 시트보기 (PDF) - Inchange Semiconductor
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B1017 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1017
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0
-80
V
VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A
-1.0 -1.7
V
VBE
Base-emitter on voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=-3A ;VCE=-5V
VCB=-80V; IE=0
VEB=-5V; IC=0
-1.0 -1.5
V
-30 μA
-100 μA
hFE-1
DC current gain
IC=-0.5A ; VCE=-5V
40
240
hFE-2
DC current gain
IC=-3A ; VCE=-5V
15
体 fT
Transition frequency
固I电NC半H导ANGE SEMICONDUCTOR COB
Collector output capacitance
hFE-1 Classifications
R
O
Y
IC=-0.5A; VCE=-5V
IE=0, f=1MHz ; VCB=-10V
9
MHz
130
pF
40-80 70-140 120-240
2
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