2SB1176-P 데이터 시트보기 (PDF) - KEXIN Industrial

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2SB1176-P

PNP Transistors

KEXIN Industrial 

SMD Type

PNP Transistors

2SB1176

Transistors

■ Features

● Satisfactory linearity of forward current transfer ratio hFE

● Low collector-emitter saturation voltage VCE(sat)

● Large collector current IC

● Complementary to 2SD1746

TO-252

6.50+0.15

-0.15

5.30+0.2

-0.2

2.30 +0.1

-0.1

0.50 +0.8

-0.7

0.80+0.1

-0.1

0.127

m ax

Unit: mm

■ Absolute Maximum Ratings Ta = 25℃

2.3

4 .60 +0.15

-0.15

0.60+ 0.1

- 0.1

1 Base

2 Collector

3 Emitter

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

-130

Collector - Emitter Voltage

VCEO

-80

V

Emitter - Base Voltage

VEBO

-7

Collector Current - Continuous

Collector current -Pulse

IC

-5

A

ICP

-10

Collector Power Dissipation

15

PC

W

Ta = 25℃

1.3

Junction Temperature

Storage Temperature range

TJ

150

℃

Tstg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

Turn-ON Time

Storage Time

Fall Time

Transition frequency

Symbol

Test Conditions

Min

VCBO Ic= -100 μA， IE=0

-130

VCEO Ic= -10 mA, IB=0

-80

VEBO IE= -100μA， IC=0

-7

ICBO VCB= -100V , IE=0

IEBO VEB= -6V , IC=0

VCE(sat) IC=-4 A, IB=-200mA

VBE(sat) IC=-4 A, IB=-200mA

VCE= -2V, IC= -100 mA

45

hFE

VCE= -2V, IC= -2 A

90

ton

tstg

IC = −2A, IB1 = −200 mA, IB2 = 200 mA

VCC = −50 V

tf

fT

VCE= -10V, IC= -500mA,f=10MHz

Typ

0.13

0.5

0.13

30

Max

-10

-50

-0.5

-1.5

260

Unit

V

uA

V

us

MHz

■ Classification of hfe(2)

Type

Range

2SB1176-Q

90-180

2SB1176-P

130-260

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