2SB1159 데이터 시트보기 (PDF) - SavantIC Semiconductor

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2SB1159

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB1159

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A

VBE

Base-emitter on voltage

IC=-5A ; VCE=-5V

ICBO

Collector cut-off current

VCB=-140V; IE=0

IEBO

Emitter cut-off current

VEB=-3V; IC=0

hFE-1

DC current gain

IC=-20mA ; VCE=-5V

hFE -2

DC current gain

IC=-1A ; VCE=-5V

hFE -3

DC current gain

IC=-5A ; VCE=-5V

COB

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

fT

Transition frequency

IC=-0.5A ; VCE=-5V

MIN TYP. MAX UNIT

-2.0

V

-1.8

V

-50

µA

-50

µA

20

60

200

20

220

pF

20

MHz

hFE-2 classifications

Q

S

P

60-120 80-160 100-200

2

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