B1097 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic

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B1097

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-30mA; IB=0

V(BR)CBO Collector-base breakdown voltage

IC=-1mA; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA; IC=0

VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A

VBEsat Base-emitter saturation voltage

IC=-5A ;IB=-0.5A

ICBO

Collector cut-off current

VCB=-60V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

IC=-3A ; VCE=-1V

‹ hFE Classifications

M

L

K

40-80 60-120 100-200

Product Specification

2SB1097

MIN TYP. MAX UNIT

-60

V

-80

V

-5

V

-0.5

V

-1.5

V

-10 μA

-10 μA

40

200

2

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