2SB1103 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SB1103 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1103
DESCRIPTION
·With TO-220C package
·DARLINGTON
·High DC durrent gain
·Low collector saturation voltage
·Complement to type 2SD1603
APPLICATIONS
·Designed for use in low frequency
power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
固I电NC半H导A体NGE SEMICONDUCTOR Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VALUE
-60
-60
UNIT
V
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current-DC
-8
A
ICM
Collector current-peak
PC
Collector power dissipation
TC=25℃
-12
A
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
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