2SB1105 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SB1105

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-25mA, RBE=∞

V(BR)EBO Emitter-base breakdown voltage

IE=-50mA, IC=0

VCEsat-1 Collector-emitter saturation voltage IC=-1.5A ,IB=-3mA

VCEsat-2 Collector-emitter saturation voltage IC=-3A ,IB=-30mA

VBEsat-1 Base-emitter saturation voltage

IC=-1.5A ,IB=-3mA

VBEsat-2 Base-emitter saturation voltage

IC=-3A ,IB=-30mA

ICBO

Collector cut-off current

VCB=-120V, IE=0

ICEO

Collector cut-off current

VCE=-100V, RBE=∞

hFE

DC current gain

IC=-1.5A ; VCE=-3V

VD

Diode forward voltage

ID=-3A

Product Specification

2SB1105

MIN TYP. MAX UNIT

-120

V

-7

V

-1.5

V

-3.0

V

-2.0

V

-3.5

V

-100 μA

-10 μA

1000

3.0

V

2

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