2SB1149 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SB1149 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1149
DESCRIPTION
·With TO-126 package
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
APPLICATIONS
·For use in operating from IC without
predriver ,such as hammer driver
PINNING(See Fig.2)
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
固I电NC半H导A体NGE SEMICONDUCTOR Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
VALUE
-100
-100
-8
UNIT
V
V
V
IC
Collector current (DC)
-3.0
A
ICM
Collector current-peak
-5.0
A
PD
Total power dissipation
Ta=25℃
TC=25℃
1.3
W
15
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
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