2SB1151 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SB1151 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1151
DESCRIPTION
·
·With TO-126 package
·Complement to type 2SD1691
·Low saturation voltage
·Large current
·High total power dissipation:PT=1.3W
·Large current capability and wide SOA
APPLICATIONS
·DC-DC converter
·Driver of solenoid or motor
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
固I电NC半H导A体NGE SEMICONDUCTOR Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
CONDITIONS
Open emitter
Open base
VALUE
-60
-60
UNIT
V
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current (DC)
-5
A
ICM
Collector current-Peak
-8
A
IB
Base current
-1
A
PD
Total power dissipation
Ta=25℃
TC=25℃
1.3
W
20
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
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