Power Transistors
PC — Ta
120
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
100
(3) Without heat sink
(PC=3W)
80
60
(1)
40
20
(2)
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
–12
TC=25˚C
–10
IB=–300mA
–200mA
–8
–150mA
–6
–100mA
–80mA
–60mA
–4
–40mA
–20mA
–2
–10mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
2SB1361
IC — VBE
–12
VCE=–5V
–10
25˚C
–8
TC=–25˚C 100˚C
–6
–4
–2
0
0
–1
–2
–3
Base to emitter voltage VBE (V)
–100
–30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
TC=100˚C
25˚C
–25˚C
– 0.03
– 0.01
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (A)
1000
hFE — IC
VCE=–5V
300 TC=100˚C
25˚C
100
–25˚C
30
10
3
1
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (A)
1000
300
100
fT — IC
VCE=–5V
f=1MHz
TC=25˚C
30
10
3
1
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10
Collector current IC (A)
10000
3000
1000
Cob — VCB
IE=0
f=1MHz
TC=25˚C
300
100
30
10
–1
–3
–10
–30
–100
Collector to base voltage VCB (V)
Area of safe operation (ASO)
–100
–30
ICP
–10
IC
–3
100ms
Non repetitive pulse
TC=25˚C
t=10ms
–1
DC
– 0.3
– 0.1
– 0.03
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector to emitter voltage VCE (V)
2