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2SB1457 데이터 시트보기 (PDF) - Toshiba
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2SB1457
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington)
Toshiba
2SB1457 Datasheet PDF : 5 Pages
1
2
3
4
5
−
4
Common emitter
Ta = 25°C
−
3
I
C
– V
CE
−
1000
−
800
−
500
−
400
−
2
−
300
−
250
−
1
IB =
−
200
μ
A
0
0
−
1
−
2
−
3
−
4
−
5
Collector-emitter voltage V
CE
(V)
V
CE (sat)
– I
C
−
5
Common emitter
IC/IB = 1000
−
3
Ta =
−
55°C
−
1
25
100
−
0.5
−
0.3
−
0.5
−
1
−
3
−
5
Collector current I
C
(A)
2SB1457
10000
h
FE
– I
C
5000
3000
1000
Tc = 100°C
25
−
55
500
300
100
−
0.03
Common emitter
VCE =
−
2 V
−
0.1
−
0.3
−
1
−
3
−
10
Collector current I
C
(A)
V
BE (sat)
– I
C
−
5
Common emitter
IC/IB = 1000
−
3
Tc =
−
55°C
25
−
1
100
−
0.5
−
0.3
−
0.5
−
1
−
3
−
5
Collector current I
C
(A)
I
C
– V
BE
−
3.0
Common emitter
−
2.5
VCE =
−
2 V
−
2.0
−
1.5
−
1.0
−
0.5
Tc = 100°C 25
−
55
0
0
−
0.4
−
0.8
−
1.2
−
1.6
−
2.0
−
2.4
−
2.8
Base-emitter voltage V
BE
(V)
P
C
– Ta
1200
1000
800
600
400
200
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
3
2006-11-21
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