2SB1407 데이터 시트보기 (PDF) - Renesas Electronics

부품명

상세내역

제조사

2SB1407

Silicon PNP Epitaxial

Renesas Electronics 

2SB1407(L)/(S)

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

Note: 1. Value at TC = 25°C.

Symbol

VCBO

VCEO

VEBO

IC

I C(peak)

PC * 1

Tj

Tstg

Ratings

Unit

–35

V

–35

V

–5

V

–2.5

A

–3

A

18

W

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ Max

Collector to base breakdown V(BR)CBO –35 —

—

voltage

Collector to emitter breakdown V(BR)CEO –35 —

—

voltage

Emitter to base breakdown

V(BR)EBO

–5

—

—

voltage

Collector cutoff current

I CBO

—

—

DC current transfer ratio

hFE1*1

60

—

hFE2

20

—

Base to emitter voltage

VBE

—

—

Collector to emitter saturation VCE(sat)

—

—

voltage

–20

320

—

–1.5

–1.0

Notes: 1. The 2SB1407(L)/(S) is grouped by hFE1 as follows.

Unit

V

V

V

µA

V

V

Test conditions

IC = –1 mA, IE = 0

IC = –10 mA, RBE = ∞

IE = –1 mA, IC = 0

VCB = –35 V, IE = 0

VCE = –2 V, IC = –0.5 A*2

VCE = –2 V, IC = –1.5 A*2

VCE = –2 V, IC = –1.5 A*2

IC = –2 A, IB = –0.2 A*2

B

60 to 120

C

D

100 to 200 160 to 320

2. Pulse test.

Share Link: