2SB1409 데이터 시트보기 (PDF) - Renesas Electronics

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2SB1409

Silicon PNP Epitaxial

Renesas Electronics 

Maximum Collector Dissipation Curve

30

20

10

0

50

100

150

Case Temperature TC (°C)

Typical Output Characteristics

–1.0

–0.8

PC = 18 W ––54.5

–4

–3.5

–0.6

–3

–2.5

–2

–0.4

–1.5

–1 mA

–0.2

IB = 0

TC = 25°C

0

–10 –20 –30 –40 –50

Collector to emitter Voltage VCE (V)

2SB1409(L)/(S)

–10

–3

–1.0

Area of Safe Operation

iC (peak)

IC (max)

PW = 10 ms

–0.3

–0.1

–0.03 Ta = 25°C

1 Shot Pulse

–0.01

–3

–10 –30

–100 –300

Collector to emitter Voltage VCE (V)

1,000

DC Current Transfer Ratio vs.

Collector Current

300

100

30

10

–0.01

VCE = –5 V

Ta = 25°C

–0.03 –0.1 –0.3

–1.0

Collector current IC (A)

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