2SB1347 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SB1347

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SB1347

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -160V(Min)

·Wide Area of Safe Operation

·Complement to Type 2SD2029

APPLICATIONS

·Power amplifier applications

·Optimum for the output stage of a HiFi audio amplifier

www.iscsemi.cn ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO

Collector-Base Voltage

-160

V

VCEO

Collector-Emitter Voltage

-160

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-12

A

ICM

Collector Current-Peak

Collector Power Dissipation

@ TC=25℃

PC

Collector Power Dissipation

@ Ta=25℃

TJ

Junction Temperature

-20

A

120

W

3.5

150

℃

Tstg

Storage Temperature Range

-55~150 ℃

isc Website：www.iscsemi.cn

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