2SB1403 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SB1403

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; RBE=∞

V(BR)CBO Collector-base breakdown voltage

IC=-100μA; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-50mA; IC=0

VCEsat-1 Collector-emitter saturation voltage IC=-3A ;IB=B -6mA

VCEsat-2 Collector-emitter saturation voltage IC=-6A ;IB=B -60mA

VBEsat-1 Base-emitter saturation voltage

IC=-3A ;IB=B -6mA

VBEsat-2 Base-emitter saturation voltage

IC=-6A ;IB=B -60mA

ICBO

Collector cut-off current

VCB=-100V; IE=0

ICEO

Collector cut-off current

VCE=-100V; RBE=∞

hFE

DC current gain

IC=-3A ; VCE=-3V

VD

Diode forward voltage

ID=6A

Product Specification

2SB1403

MIN TYP. MAX UNIT

-120

V

-120

V

-7

V

-1.5

V

-3.0

V

-2.0

V

-3.5

V

-10

μA

-10

μA

1000

20000

3.0

V

2

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