2SB1430 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SB1430

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

isc Product Specification

2SB1430

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -100V(Min)

·High DC Current Gain-

: hFE= 2000(Min)@ (VCE= -2V, IC= -2A)

·Low Collector Saturation Voltage-

: VCE(sat)= -1.5V(Max)@ (IC= -2A, IB=B -2mA)

APPLICATIONS

·Designed for low-frequency power amplifiers and low-

speed switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO

Collector-Base Voltage

-100

V

VCEO Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

-7

V

IC

Collector Current-Continuous

-5

A

ICM

Collector Current-Peak

-10

A

IB

Base Current-Continuous

Collector Power Dissipation

@Ta=25℃

PC

Collector Power Dissipation

@TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature

-0.5

A

2

W

20

150

℃

-55~150 ℃

isc Website：www.iscsemi.cn

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