2SB1495 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SB1495 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2SB1495
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB=B -1.5mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -1.5A; IB=B -1.5mA
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -8V; IC= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -2V
hFE-2
DC Current Gain
IC= -2A; VCE= -2V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= -1.5A, IB1= -IB2= -1.5mA,
VCC≈ -30V; RL= 20Ω
MIN TYP. MAX UNIT
-100
V
-1.5
V
-2.0
V
-10 μA
-4.0 mA
2000
2000
0.5
μs
1.0
μs
0.4
μs
isc Website：www.iscsemi.cn
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