2SB1490 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SB1490 Datasheet PDF : 2 Pages
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Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tc~25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= -30mA; IB=0
VcE(sat) Collector-Emitter Saturation Voltage lc= -6A; IB= -6mA
VaE(sat) Base-Emitter Saturation Voltage
lc= -6A; IB= -6mA
ICBO
Collector Cutoff Current
VCB=-160V; IE=0
I CEO Collector Cutoff Current
VCE= -140V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
hpE-1
DC Current Gain
lc=-1A;VCE=-5V
hFE-2
DC Current Gain
lc= -6A; VCE= -5V
fi
Current-Gain—Bandwidth Product lc=-0.5A;VCE=-10V
Switching Times
'on
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC=-6A; lBi=-lB2=-6mA,
Vcc= -50V
Classifications
Q
P
5000-15000 8000-30000
2SB1490
MIN TYP. MAX UNIT
-140
V
-2.5
V
-3.0
V
-100
uA
-100
wA
-100
uA
2000
5000
30000
20
MHz
1.0
us
1.5
us
1.2
ns
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