2SB696 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SB696

Silicon PNP Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistors

isc Product Specification

2SB696

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA; RBE= ∞

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; RBE= ∞

V(BR)CBO Collector-Base Breakdown Voltage

IC= -5mA; IE= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -5mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB=B -0.5A

VBE(on) Base-Emitter On Voltage

IC= -1A; VCE= -5V

ICBO

Collector Cutoff Current

VCB= -80V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -4V; IC= 0

hFE

DC Current Gain

IC= -1A; VCE= -5V

fT

Current-Gain—Bandwidth Product

IC= -1A; VCE= -5V

MIN TYP. MAX UNIT

-120

V

-120

V

-150

V

-6

V

-0.6

V

-1.5

V

-0.1 mA

-0.1 mA

40

320

15

MHz

‹ hFE Classifications

C

D

E

F

40-80 60-120 100-200 160-320

isc Website：www.iscsemi.cn

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