2SB856 데이터 시트보기 (PDF) - SavantIC Semiconductor
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2SB856 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB856
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; RBE=6
V(BR)CBO Collector-base breakdown voltage
IC=-5mA; IE=0
V(BR)EBO Emitter-base breakdown votage
IE=-5mA; IC=0
VCEsat Collector-emitter saturation voltage IC=-2 A;IB=-0.2 A
VBE
Base-emitter voltage
IC=-1A ; VCE=-4V
ICBO
Collector cut-off current
VCB=-20V; IE=0
hFE-1
DC current gain
IC=-1A ; VCE=-4V
hFE-2
DC current gain
IC=-0.1A ; VCE=-4V
fT
Transition frequency
IC=-0.5A ; VCE=-4V
MIN TYP. MAX UNIT
-50
V
-50
V
-4
V
-1.2
V
-1.5
V
-100 µA
35
200
35
35
MHz
hFE-1 classifications
A
B
C
35-70 60-120 100-200
2
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