2SB761A 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SB761A Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB761 2SB761A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
2SB761
-60
VCEO
Collector-emitter
breakdown voltage
IC=-30mA; IB=0
V
2SB761A
-80
VCEsat Collector-emitter saturation voltage IC=-3 A;IB=-0.375 A
-1.2
V
VBE
Base-emitter on voltage
IC=-3A ; VCE=-4V
-1.8
V
ICES
Collector
cut-off current
2SB761 VCE=-60V; VBE=0
2SB761A VCE=-80V; VBE=0
ICEO
Collector cut-off current
VCE=-60V; IB=0
-200 μA
-300 μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1
mA
hFE-1
DC current gain
固I电NC半H导A体NGE SEMICONDUCTOR hFE-2
DC current gain
Switching times
ton
Turn-on time
toff
Turn-off time
IC=-1A ; VCE=-4V
IC=-3A ; VCE=-4V
IC=-1A ; IB1=-IB2=-0.1 A
40
250
10
0.5
μs
2.0
μs
hFE-1 classifications
R
Q
P
40-90
70-150 120-250
2
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