2SB921 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SB921

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SB921

DESCRIPTION

·High Collector Current:: IC= -7A

·Low Collector Saturation Voltage

: VCE(sat)= -0.5V(Max)@IC= -4A

·Complement to Type 2SD1237

APPLICATIONS

·Designed for large current switching of relay drivers, high-

speed inverters, converters applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO Collector-Base Voltage

-120

V

VCEO Collector-Emitter Voltage

-80

V

VEBO Emitter-Base Voltage

-6

V

IC

Collector Current-Continuous

-7

A

ICM

Collector Current-Peak

Total Power Dissipation

@ TC=25℃

PC

Total Power Dissipation

@ Ta=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

-12

A

40

W

1.75

150

℃

-55~150 ℃

isc Website：www.iscsemi.cn

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