2SB946Q 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic

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2SB946Q

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA , IB=0

VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.25A

VBEsat Base-emitter saturation voltage

IC=-5A; IB=-0.25A

ICBO

Collector cut-off current

VCB=-100V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE-1

DC current gain

hFE-2

DC current gain

fT

Transition frequency

Switching times

IC=-0.1A ; VCE=-2V

IC=-3A ; VCE=-2V

IC=-0.5A ; VCE=-10V

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=-3A ;IB1=-0.3A

IB2=0.3A

‹ hFE-2 Classifications

R

Q

P

60-120 90-180 130-260

Product Specification

2SB946

MIN TYP. MAX UNIT

-80

V

-0.5

V

-1.5

V

-10 μA

-50 μA

45

60

260

30

MHz

0.5

μs

1.5

μs

0.1

μs

2

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