C1515K 데이터 시트보기 (PDF) - Renesas Electronics

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C1515K

Silicon NPN Triple Diffused

Renesas Electronics 

2SC1515(K)

Electrical Characteristics

Item

Symbol Min

Collector to emitter breakdown voltage V(BR)CES 200

V(BR)CEO

150

Emitter to base breakdown voltage

V(BR)EBO

5

Collector cutoff current

ICBO

—

DC current transfer ratio

hFE

30

Collector to emitter saturation voltage

VCE(sat)

—

Base to emitter saturation voltage

VBE(sat)

—

Gain bandwidth product

fT

60

Collector output capacitance

Cob

—

(Ta = 25°C)

Typ Max Unit

Test conditions

—

—

V IC = 10 µA, RBE = 0

—

—

V IC = 1 mA, RBE = ∞

—

—

V IE = 10 µA, IC = 0

—

0.1

µA VCB = 20 V, IE = 0

—

300

VCE = 6 V, IC = 10 mA

—

1.0

V IC = 10 mA, IB = 1 mA

—

1.5

V IC = 10 mA, IB = 1 mA

—

—

MHz VCE = 6 V, IC = 10 mA

—

10

pF VCB = 6 V, IE = 0, f = 1 MHz

Rev.2.00 Aug 10, 2005 page 2 of 4

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