2SC2563 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SC2563 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ,IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ,IC=0
VCE(sat) Collector-emitter saturation voltage IC=4A; IB=0.4A
ICBO
Collector cut-off current
VCB=120V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=4A ; VCE=5V
fT
Transition frequency
IC=1A ; VCE=5V
Product Specification
2SC2563
MIN TYP. MAX UNIT
120
V
5
V
2.0
V
50 μA
50 μA
55
160
35
90
MHz
2
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