Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2497 2SC2497A
DESCRIPTION
·
·With TO-126 package
·Complement to type 2SA1096/A
·High collector to emitter voltage VCEO
APPLICATIONS
·For low-frequency power amplification
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
固IN电C半H导AN体GE SEMICONDUCTOR SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector- emitter voltage
2SC2497
2SC2497A
Open base
VEBO
Emitter-base voltage
Open collector
VALUE
70
50
60
5
UNIT
V
V
V
IC
Collector current
1.5
A
ICM
Collector current-peak
PD
Total power dissipation
TC=25℃
3
A
1.2*1
W
5*2
Tj
Junction temperature
150
℃
Tstg
Storage temperature
Note) *1: Without heat sink
*2: With a 100 × 100 × 2 mm A1 heat sink
-55~+150
℃