2SC2712-Y(2005) 데이터 시트보기 (PDF) - Unisonic Technologies
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2SC2712-Y Datasheet PDF : 4 Pages
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2SC2712
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
150
mA
Base Current
IB
30
mA
Collector Power Dissipation
Junction Temperature
Storage Temperature
PC
150
mW
TJ
+125
℃
TSTG
-55 ~ +125
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transistor Frequency
Collector Output Capacitance
Noise Figure
SYMBOL
ICBO
IEBO
hFE
VCE(SAT)
fT
Cob
NF
TEST CONDITIONS
VCB=60V, IE=0
VEB=5V, IC=0
VCE=6V, IC=2mA
IC=100mA, IB=10mA
VCE=10V, IC=1mA
VCB=10V, IE=0, f=1MHz
VCE=6V, IC=0.1mA
f=1kHz, Rg=10KΩ
MIN TYP MAX UNIT
0.1
µA
0.1
µA
70
700
0.1 0.25
V
80
MHz
2.0
3.5
pF
1.0
10
dB
CLASSIFICATION OF hFE
RANK
RANGE
O
70~140
Y
120~240
G
200~400
L
350~700
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R206-029.B
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