2SC2923 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SC2923 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2923
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEsat Collector-emitter saturation voltage IC=30mA IB=3m A
1.5
V
VBE
Base-emitter on voltage
IC=30mA ; VCE=10V
V(BR)CBO Collector-base breakdown voltage
IC=10μA;IE=0
V(BR)CEO Collector-emitter breakdown voltage IC=100μA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=10μA; IC=0
1.2
V
300
V
300
V
7
V
hFE
DC current gain
IC=5mA ; VCE=50V
50
250
COB
Output capacitance
固IN电C半H导AN体GE SEMICONDUCTOR fT
Transition frequency
IE=0; VCB=30V;f=1MHz
IE=20mA ; VCB=30V
2.4
70
pF
MHz
2
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