2SC3356G-A-AE3-R(2018) 데이터 시트보기 (PDF) - Unisonic Technologies
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2SC3356G-A-AE3-R Datasheet PDF : 4 Pages
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2SC3356
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
BVCBO
20
V
Collector to Emitter Voltage
Emitter to Base Voltage
BVCEO
12
V
BVEBO
3
V
Collector Current
Power Dissipation
IC
SOT-23-3
SOT-23
PD
100
mA
200
mW
SOT-89
500
mW
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-65 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)
PARAMETER
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector-Base Cut-Off Current
Emitter-Base Cut-Off Current
DC Current Gain
Gain Bandwidth Product
Feed-Back Capacitance
Noise Figure
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
fT
CRE
NF
CLASSIFICATION OF hFE
RANK
RANGE
A
50-170
TEST CONDITIONS
IC=10μA, IE=0
IC=1mA, RBE=∞
IE=10μA, IC=0
VCB =10V,IE =0
VEB =1 V, IC=0
VCE =10 V, IC =20 mA
VCE =10 V, IC =20 mA
VCB =10 V, IE =0, f =1.0MHz
VCE =10 V, IC =7mA, f =1.0GHz
B
160-300
MIN TYP MAX UNIT
20
V
12
V
3
V
1.0 μA
1.0 μA
50
300
7
GHz
1.0 pF
2.0 dB
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R206-024.I
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