2SC3855 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic
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2SC3855 Datasheet PDF : 3 Pages
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Product Specification
Silicon
2SC3855
Power
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter breakdown voltage IC=50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=5A IB=0.5A
ICBO
Collector cut-off current
VCB=200V IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=3A ; VCE=4V
fT
Transition frequency
IC=0.5A ; VCE=12V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5A;RL=12Ω
IB1=- IB2=0.5A
VCC=60V
www.jmnic.com
Transistors
MIN
TYP. MAX UNIT
140
V
2.0
V
100
μA
100
μA
50
20
MHz
0.30
μs
2.40
μs
0.40
μs
JMnic
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