2SC4559 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SC4559 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A
VBEsat Base-emitter saturation voltage
IC=3A; IB=0.6A
ICBO
Collector cut-off current
VCB=500V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=3A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=10V;f=1MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=3A; IB1=0.6A
IB2=-1.2A;VCC=150V
Product Specification
2SC4559
MIN TYP. MAX UNIT
400
V
1.0
V
1.5
V
0.1 mA
0.1 mA
10
8
5.5
MHz
1.0 μs
3.0 μs
0.3 μs
2
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