2SC4738FV-GR 데이터 시트보기 (PDF) - Toshiba
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2SC4738FV-GR Datasheet PDF : 4 Pages
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2SC4738FV
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4738FV
Audio Frequency General Purpose Amplifier Applications
Unit: mm
• High Voltage: VCEO = 50 V
• High Current: IC = 150 mA (max)
• High hFE: hFE = 120 ~ 400
• Excellent hFE Linearity
: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
• Complementary to 2SA1832FV
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
30
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 ~ 150
°C
* : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mmt)
1.2±0.05
0.8±0.05
1
2
3
VESM
1.BASE
2.EMITTER
3.COLLECTOR
JEDEC
―
JEITA
―
TOSHIBA
―
Weight: 0.0015g (typ.)
0.5mm
0.45mm
0.45mm
0.4mm
Marking
LY
Type Name
hFE Rank
1
2004-06-07
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