2SC4738FV-GR 데이터 시트보기 (PDF) - Toshiba

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2SC4738FV-GR

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Collector cut-off current

ICBO

VCB = 60 V, IE = 0

Emitter cut-off current

IEBO

VEB = 5 V, IC = 0

DC current gain

hFE (Note) VCE = 6 V, IC = 2 mA

Collector-emitter saturation voltage

VCE (sat) IC = 100 mA, IB = 10 mA

Transition frequency

fT

VCE = 10 V, IC = 1 mA

Collector output capacitance

Cob

VCB = 10 V, IE = 0, f = 1 MHz

Note: hFE Classification Y (Y): 120 ~ 240, GR (G): 200 ~ 400

( ) Marking symbol

2SC4738FV

Min Typ. Max Unit

⎯

⎯

0.1 µA

⎯

⎯

0.1 µA

120 ⎯ 400

―

0.1 0.25

V

80

⎯

⎯ MHz

⎯

2.0

⎯

pF

2

2004-06-07

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