2SC4672
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Current (Pulse) (Note 1)
Collector Dissipation
Junction Temperature
Storage Temperature
Note1: Single pulse, PW=10ms
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
TSTG
RATINGS
60
50
6
2
5
500
+150
-40 ~ +150
UNIT
V
V
V
A
A
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-Base Breakdown Voltage
BVCBO IC =50µA
60
Collector-Emitter Breakdown Voltage BVCEO IC =1mA
50
Emitter-Base Breakdown Voltage
BVEBO IE =50µA
6
Collector Cutoff Current
ICBO VCB=60V
Emitter Cutoff Current
IEBO
VEB=5V
Collector-Emitter Saturation Voltage VCE(sat) IC /IB=1A/50mA (Note1)
DC Current Transfer Ratio
hFE VCE=2V, IC =0.5A (Note1)
120
Transition Frequency
fT
VCE=2V, IE =-0.5A, f=100MHz
Output Capacitance
Cob VCB=10V, IE =0A,f=1MHz
Note 1: Measured using pulse current.
TYP
0.1
210
25
MAX
0.1
0.1
0.35
400
UNIT
V
V
V
µA
µA
V
MHz
pF
■ CLASSIFICATION OF hFE
RANK
RANGE
A
120 ~ 240
B
200 ~ 400
UTC assum es no responsibility for equipm ent failures that result from using products at values that
exceed, even m om entarily, rated values (such as m axim um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or system s where
m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The inform ation
presented in this docum ent does not form part of any quotation or contract, is believed to be accurate
and reliable and m ay be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2
QW-R208-004.B