2SC4689 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic
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2SC4689 Datasheet PDF : 3 Pages
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2SC4689
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
MIN
TYP. MAX UNIT
120
V
ICBO
Collector cut-off current
VCB=120V; IE=0
5
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
5
μA
hFE-1
DC current gain
IC=1A ; VCE=5V
55
160
hFE-2
DC current gain
IC=4A ; VCE=5V
35
75
VCE(sat) Collector-emitter saturation voltage IC=6A ; IB=0.6A
0.35
2
V
VBE
Base-emitter voltage
IC=4A ; VCE=5V
0.95
1.5
V
fT
Transition frequency
IC=1A ; VCE=5V
30
MHz
Cob
Collector output capacitance
IE=0;VCB=10V;f=1MHz
190
pF
hFE-1 classifications
R
O
55-110
80-160
JMnic
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