C4848 데이터 시트보기 (PDF) - Inchange Semiconductor

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C4848

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC4848

DESCRIPTION

·Low Collector Saturation Voltage

: VCE(sat)= 0.6V(Max)@ IC= 5A

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 120V (Min)

·High Switching Speed

·Wide Area of Safe Operation

APPLICATIONS

·Designed for power amplifier and general purpose

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

250

V

VCEO

Collector-Emitter Voltage

120

V

VEBO

Emitter-Base Voltage

12

V

IC

Collector Current-Continuous

7

A

ICM

Collector Current-Pulse

Collector Power Dissipation

@ Ta=25℃

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

15

A

2

W

40

150

℃

-55~150

℃

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