2SC5509 데이터 시트보기 (PDF) - Renesas Electronics

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2SC5509

NPN SILICON RF TRANSISTOR

Renesas Electronics 

2SC5509

Chapter Title

ELECTRICAL CHARACTERISTICS (TA = +25 °C)

Parameter

DC Characteristics

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

RF Characteristics

Gain Bandwidth Product

Insertion Power Gain

Noise Figure

Reverse Transfer Capacitance

Maximum Available Power Gain

Maximum Stable Power Gain

Gain 1 dB Compression Output

Power

3rd Order Intermodulation

Distortion Output Intercept Point

Symbol

Conditions

ICBO

IEBO

hFENote 1

VCB = 5 V, IE = 0

VEB = 1 V, IC = 0

VCE = 2 V, IC = 10 mA

fT

|S21e|2

NF

Cre Note 2

MAG Note 3

MSG Note 4

PO (1 dB)

VCE = 3 V, IC = 90 mA, f = 2 GHz

VCE = 2 V, IC = 50 mA, f = 2 GHz

VCE = 2 V, IC = 10 mA, f = 2 GHz,

ZS = Zopt

VCB = 2 V, IE = 0, f = 1 MHz

VCE = 2 V, IC = 50 mA, f = 2 GHz

VCE = 2 V, IC = 50 mA, f = 2 GHz

VCE = 2 V, IC = 70 mA Note 5, f = 2 GHz

OIP3

VCE = 2 V, IC = 70 mA Note 5, f = 2 GHz

MIN.

–

–

50

13

8

–

–

–

–

–

–

TYP.

–

–

70

15

11

1.2

0.5

14

15

17

27

MAX.

600

600

100

–

–

1.7

0.75

–

–

–

–

Unit

nA

nA

–

GHz

dB

dB

pF

dB

dB

dBm

dBm

Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

3. MAG =

S21

S12

(K – √ (K2 – 1) )

S21

4. MSG =

S12

5. Collector current when PO (1 dB) is output

hFE CLASSIFICATION

Rank

Marking

hFE Value

FB/YFB

T80

50 to 100

R09DS0056EJ0300 Rev.3.00

Mar 5, 2013

Page 2 of 8

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