SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1446
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=0.1A; IC=0
VCEO(SUS) Collector-emitter sustaining voltage IC=2A; L=10mH
VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.06A
VBEsat
Base-emitter saturation voltage
ICBO
Collector cut-off current
hFE
DC current gain
fT
Transition frequency
IC=3A ;IB=0.06A
VCB=350V; IE=0
IC=2A ; VCE=2V
IC=1A ; VCE=10V;
MIN TYP. MAX UNIT
5
V
400
V
1.5
V
2.5
V
100
µA
500
15
MHz
2