D1505 데이터 시트보기 (PDF) - SavantIC Semiconductor

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D1505

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD1505

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=1mA ,IB=0

V(BR)CBO Collector-base breakdown voltage

IC=50µA ,IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=50µA ,IC=0

VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A

VBEsat

Base-emitter saturation voltage

IC=2A; IB=0.2A

ICBO

Collector cut-off current

VCB=40V; IE=0

IEBO

Emitter cut-off current

VEB=4V; IC=0

hFE

DC current gain

IC=0.5A ; VCE=3V

COB

Output capacitance

IE=0 ; VCB=10V,f=1MHz

fT

Transition frequency

IC=0.5A ; VCE=5V

MIN TYP. MAX UNIT

50

V

60

V

5

V

1.0

V

1.5

V

1.0

µA

1.0

µA

60

320

40

pF

90

MHz

2

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