2SD1296J 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic
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2SD1296J Datasheet PDF : 3 Pages
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2SD1296
DESCRIPTION
·With TO-3PN package
·High DC current gain
·Low saturation voltage
APPLICATIONS
·For audio frequency power amplifier
and low speed high current switching
industrial use
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
Ta=25℃
MAX
150
100
8
15
30
100
3.0
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
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