D1580 데이터 시트보기 (PDF) - Inchange Semiconductor

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D1580

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD1580

DESCRIPTION

·Low Collector Saturation Voltage

: VCE(sat)= 1.0V(Max.)@ IC= 4A

·High Collector Power Dissipation

·Good Linearity of hFE

·Wide Area of Safe Operation

APPLICATIONS

·Designed for low frequency power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current-Continuous

ICM

Collector Current-Pulse

Collector Power Dissipation

@ Ta=25℃

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

80

V

5

V

7

A

10

A

1.5

W

40

150

℃

-55~150

℃

isc Website：www.iscsemi.cn

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