2SD1585 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD1585 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A
VBEsat Base-emitter saturation voltage
IC=2A ;IB=0.2A
ICBO
Collector cut-off current
VCB=60V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=50mA ; VCE=5V
hFE-2
DC current gain
IC=0.5A ; VCE=5V
fT
Transition frequency
IC=0.1A; VCE=5V
COB
Collector output capacitance
f=1MHz ; VCB=10V
hFE-2 Classifications
M
L
K
40-80
60-120 100-200
Product Specification
2SD1585
MIN TYP. MAX UNIT
60
V
1.5
V
2.0
V
10
μA
10
μA
20
40
200
16
MHz
48
pF
2
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