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2SD2130 데이터 시트보기 (PDF) - Toshiba
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2SD2130
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor)
Toshiba
2SD2130 Datasheet PDF : 5 Pages
1
2
3
4
5
I
C
– V
CE
6
Common emitter
400
Tc = 25°C
500
5
300
4
200
3
170
2
160
1
IB = 150 µA
0
0
0
1
2
3
4
5
6
7
Collector-emitter voltage V
CE
(V)
20000
10000
Common emitter
VCE = 2 V
h
FE
– I
C
5000
3000
Tc = 100°C
1000
25
−
55
500
300
0.05 0.1
0.3 0.5 1
35
10
Collector current I
C
(A)
2SD2130
6
Common emitter
VCE = 2 V
5
I
C
– V
BE
4
3
2
Tc = 100°C
−
55
25
1
0
0
0.4
0.8
1.2
1.6
2.0 2.4
2.8
Base-emitter voltage V
BE
(V)
V
CE
– I
B
2.4
Common emitter
Tc = 25°C
2.0
1.6
IC = 6 A
5
1.2
4
3
2
0.8
1
0.3
0.1
0.4
0
0.1 0.3 0.5 1
3 5 10 30 50 100 300 500
Base current I
B
(mA)
V
CE (sat)
– I
C
10
Common emitter
5
IC/IB = 500
3
1
25
0.5
Tc =
−
55°C
100
0.3
0.1
0.3 0.5
1
35
10
Collector current I
C
(A)
10
5
3
25
1
V
BE (sat)
– I
C
Common emitter
IC/IB = 500
Tc =
−
55°C
100
0.5
0.3
0.1
0.3 0.5
1
35
10
Collector current I
C
(A)
3
2003-02-04
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