2SD2162M 데이터 시트보기 (PDF) - Renesas Electronics

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2SD2162M

SILICON POWER TRANSISTOR

Renesas Electronics 

ELECTRICAL CHARACTERISTICS (TA = 25°C)

Parameter

Symbol

Conditions

Collector cutoff current

DC current gain

Collector saturation voltage

Base saturation voltage

ICBO

hFE1

hFE2

VCE(sat)

VBE(sat)

VCB = 100 V, IE = 0 A

VCE = 2.0 V, IC = 3.0 ANote

VCE = 2.0 V, IC = 5.0 ANote

IC = 3.0 A, IB = 3.0 mANote

IC = 3.0 A, IB = 3.0 mANote

Gain bandwidth product

fT

VCE = 5.0 V, IC = 0.8 A

Collector capacitance

Turn-on time

Storage time

Fall time

Cob

VCB = 10 V, IE = 0 A, f = 1.0 MHz

ton

IC = 3.0 A, RL = 16.7 Ω,

tstg

IB1 = −IB2 = 3.0 mA, VCC ≅ 50 V

Refer to the test circuit.

tf

Note Pulse test PW ≤ 350 µs, duty cycle ≤ 2%

hFE CLASSIFICATION

Marking

hFE1

M

2,000 to 5,000

L

3,000 to 7,000

K

5,000 to 15,000

SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT

2SD2162

MIN.

2,000

500

TYP.

MAX.

Unit

1.0

µA

15,000

0.9

1.5

V

1.6

2.0

V

30

MHz

50

pF

1.0

µs

3.5

µs

1.2

µs

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2

Data Sheet D14865EJ2V0DS

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