2SD2391(RevA) 데이터 시트보기 (PDF) - ROHM Semiconductor
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2SD2391 Datasheet PDF : 4 Pages
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Transistors
2SD2391
Medium Power Transistor (60V, 2A)
2SD2391
zFeatures
1) Low saturation voltage , typically
VCE (sat) =0.13V at IC / IB =1A /50mA.
2) Collector-emitter voltage =60V
3) Pc = 2W (on 40×40×0.7mm ceramic board).
4) Complements the 2SB1561.
zExternal dimensions (Unit : mm)
MPT3
4.5
1.6
1.5
(1)
(2)
(3)
0.4
0.4
0.5
0.4
(1)Base
1.5 1.5
3.0
(2)Collector
(3)Emitter
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCEO
VEBO
Collector current
IC
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
∗1 Single pulse, Pw=10ms
∗2 When mounted on a 40+ 40+ 0.7mm ceramic board.
Limits
60
60
6
2
6
0.5
2
150
−55 to +150
Unit
V
V
V
A
A ∗1
W
∗2
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗ Measured using pulse current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE1
hFE2
fT
Cob
Min.
Typ.
Max.
Unit
Conditions
60
−
−
V
IC=50µA
60
−
−
V
IC=1mA
6
−
−
V
IE=50µA
−
−
0.1
µA VCB=50V
−
−
0.1
µA VEB=5V
−
0.13
0.35
V
IC/IB=1A/50mA
∗
120
−
270
−
VCE/IC=−2V/−0.5A
45
−
−
−
VCE/IC=−2V/−1.5A
−
210
−
MHz VCE=2V, IE=−0.5A, f=100MHz
∗
−
21
−
pF VCB=10V, IE=0A, f=1MHz
Rev.A 1/3
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