2SD2391(RevA) 데이터 시트보기 (PDF) - ROHM Semiconductor
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2SD2391 Datasheet PDF : 4 Pages
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Transistors
zPackaging specifications and hFE
Type
2SD2391
Package
hFE
Marking
Code
Basic ordering unit (pieces)
∗Denotes hFE
MPT3
Q
DT∗
T100
1000
2SD2391
z Electrical characteristic curves
2.0
20mA 18mA 16mA
14mA
12mA
1.6
10mA
1.2
8mA
6mA
0.8
4mA
0.4
2mA
0.0
0
1
IB=0mA Ta=25°C
2
3
4
5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter output
characteristics
5
2
1
500m
200m
100m
50m
VCE=2V
20m
10m
5m
2m
1m
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.2 Grounded emitter propagation
characteristics
1000
500
200
100
50
Ta=100°C
25°C
−40°C
VCE=2V
20
10
5
2
1
10m 20m 50m 100m 200m 500m 1 2
5 10
COLLECTOR CURRENT : IC (A)
Fig.3 DC current gain vs.
collector current ( Ι )
1000
500
200
100
50
Ta=25°C
VCE=5V
2V
1V
20
10
5
2
1
10m 20m 50m 100m 200m 500m 1 2
5 10
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain
vs. collector current ( ΙΙ )
1000
500
IC/IB=20
200
100
Ta=100°C
50
25°C
20
−40°C
10
5
2
1
5m 10m 20m 50m 100m 200m 500m 1 2 5
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-emitter saturation
voltage vs. collector current ( Ι )
1000
500
Ta=25°C
200
100
IC/IB=50
50
20
20
10
10
5
2
1
5m 10m 20m 50m100m 200m 500m 1 2 5
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-emitter saturation
voltage vs. collector current ( ΙΙ )
Rev.A 2/3
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