2SJ222 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SJ222

Silicon P-Channel MOS FET

Hitachi -> Renesas Electronics 

2SJ222

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown

voltage

V(BR)DSS –100

Gate to source breakdown

voltage

V(BR)GSS ±20

Gate to source leak current

I GSS

Zero gate voltage drain current IDSS

Gate to source cutoff voltage VGS(off)

Static drain to source on state RDS(on)

resistance

—

—

–1.0

—

—

Forward transfer admittance |yfs|

7.5

Input capacitance

Ciss —

Output capacitance

Coss —

Reverse transfer capacitance Crss —

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body to drain diode forward VDF

—

voltage

Body to drain diode reverse trr

—

recovery time

Note: 1. Pulse test

Typ Max

—

—

—

—

—

—

—

0.12

0.16

12

1800

680

145

15

115

320

170

–1.05

±10

–250

–2.0

0.16

0.22

—

—

—

—

—

—

—

—

—

280 —

Unit

V

V

µA

µA

V

Ω

S

pF

pF

pF

ns

ns

ns

ns

V

ns

Test conditions

ID = –10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±16 V, VDS = 0

VDS = –80 V, VGS = 0

ID = –1 mA, VDS = –10 V

ID = –10 A, VGS = –10 V*1

ID = –10 A, VGS = –4 V*1

ID = –10 A, VDS = –10 V*1

VDS = –10 V, VGS = 0,

f = 1 MHz

ID = –10 A, VGS = –10 V,

RL = 3 Ω

IF = –20 A, VGS = 0

IF = –20 A, VGS = 0,

diF/dt = 50 A/µs

See characteristic curves of 2SJ221

3

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