2SJ181 데이터 시트보기 (PDF) - Renesas Electronics
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2SJ181 Datasheet PDF : 8 Pages
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2SJ181(L), 2SJ181(S)
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
–1.0
–10 V
–0.8
–6 V
Pulse Test
–0.6
–5 V
–0.4
–0.2
0
0
–4.5 V
VGS = –4 V
–10 –20 –30 –40 –50
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–20
Pulse Test
–16
–12
ID = –0.5 A
–8
–4
–0.2 A
–0.1 A
0
0
–4
–8 –12 –16 –20
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 7
Maximum Safe Operation Area
–10
–3
–1
–0.3
–0.1
–0.03
10 µs
DC
Operation in
this area is
limited by RDS
O(PopWne)r=at1io0nm(Ts1c(1=ms2s1h50o°0Ct) )µs
Ta = 25°C
–0.01
–10 –20 –50 –100 –200 –500 –1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
–0.5
–0.4
–0.3
–0.2
–0.1
0
0
75°C
Tc = –25°C
25°C
VDS = –20 V
Pulse Test
–2 –4 –6 –8 –10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
500
Pulse Test
200
100
50
VGS = –10 V
20
10
–15 V
5
–0.02 –0.05 –0.1 –0.2 –0.5 –1 –2
Drain Current ID (A)
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