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2SJ517 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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2SJ517
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SJ517 Datasheet PDF : 8 Pages
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2SJ517
Reverse Drain Current vs.
Source to Drain Voltage
–5
–4
–4 V
–3
V
GS
= 0, 5V
–2
–2.5 V
–1
Pulse Test
0
–0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V
SD
(V)
Switching Time Test Circuit
Vin Monitor
D.U.T.
Vout
Monitor
R
L
Vin
4V
50
Ω
V
DD
= –10 V
Waveform
Vin
10%
90%
90%
90%
Vout
td(on)
10%
tr
td(off)
10%
t
f
6
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