2SK2220 데이터 시트보기 (PDF) - Renesas Electronics

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2SK2220

Silicon N-Channel MOS FET

Renesas Electronics 

2SK2220, 2SK2221

Absolute Maximum Ratings

Item

Drain to source voltage

2SK2220

2SK2221

Gate to source voltage

Drain current

Body to drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

Note: 1. Value at Tc = 25°C

Electrical Characteristics

Symbol

VDSX

VGSS

ID

IDR

Pch*1

Tch

Tstg

Item

Symbol Min

Typ

Drain to source

2SK2220

V(BR)DSX

180

—

breakdown voltage

2SK2221

200

—

Gate to source breakdown voltage V(BR)GSS ±20

—

Gate to source cutoff voltage

VGS(off)

0.15

—

Drain to source saturation voltage

VDS(sat)

—

—

Forward transfer admittance

|yfs|

0.7

1.0

Input capacitance

Ciss

—

600

Output capacitance

Coss

—

800

Reverse transfer capacitance

Crss

—

8

Turn-on time

ton

—

250

Turn-off time

toff

—

90

Note: 2. Pulse Test

Ratings

180

200

±20

8

8

100

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

W

°C

°C

Max

—

—

—

1.45

12

1.4

—

—

—

—

—

(Ta = 25°C)

Unit

Test conditions

V ID = 10 mA, VGS = –10 V

V IG = ±100 µA, VDS = 0

V ID = 100 mA, VDS = 10 V

V

ID = 8 A, VGD = 0 V*2

S

ID = 3 A, VDS = 10 V*2

pF VGS = –5 V, VDS = 10 V,

pF f = 1 MHz

pF

ns VDD = 30 V, ID = 4 A

ns

Rev.2.00 Sep 07, 2005 page 2 of 5

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