2SK3404-ZK 데이터 시트보기 (PDF) - NEC => Renesas Technology

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2SK3404-ZK

MOS FIELD EFFECT TRANSISTOR

NEC => Renesas Technology 

2SK3404

ELECTRICAL CHARACTERISTICS(TA = 25°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

Drain Leakage Current

IDSS

VDS = 30 V, VGS = 0 V

Gate Leakage Current

IGSS

VGS = ±20 V, VDS = 0 V

Gate to Source Cut-off Voltage

Forward Transfer Admittance

Drain to Source On-state Resistance

VGS(off)

| yfs |

RDS(on)1

VDS = 10 V, ID = 1 mA

VDS = 10 V, ID = 20 A

VGS = 10 V, ID = 20 A

RDS(on)2

VGS = 4.5 V, ID = 20 A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

QG

QGS

QGD

VF(S-D)

trr

Qrr

VDS = 10 V

VGS = 0 V

f = 1 MHz

VDD = 15 V , ID = 20 A

VGS(on) = 10 V

RG = 10 Ω

VDD = 24 V

VGS = 10 V

ID = 40 A

IF = 40 A, VGS = 0 V

IF = 40 A, VGS = 0 V

di/dt = 100 A/µs

MIN.

1.5

8.0

TYP.

11

15

1400

410

180

20

9

50

14

25

5.0

7.0

1.0

31

28

MAX.

10

±10

2.5

14

21

UNIT

µA

µA

V

S

mΩ

mΩ

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V

ns

nC

TEST CIRCUIT 1 SWITCHING TIME

D.U.T.

RG

PG.

VGS

0

τ

τ = 1µs

Duty Cycle ≤ 1%

RL

VDD

VGS

VGS

Wave Form

0 10%

VDS

VDS

Wave Form

0

td(on)

90%

90%

10%

tr td(off) tf

ton

toff

TEST CIRCUIT 2 GATE CHARGE

D.U.T.

IG = 2 mA

RL

PG.

50 Ω

VDD

2

Data Sheet D14638EJ2V0DS

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